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Flexible conductive-bridging random access memory (CBRAM) devices were fabricated on polyimide using a low-temperature process. These devices show excellent performance and stability, indicating potential for flexible electronics.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Solid-State Physics

Background:

  • Flexible electronics demand advanced memory devices with robust performance.
  • Conductive-bridging random access memory (CBRAM) offers a promising avenue for non-volatile memory solutions.

Purpose of the Study:

  • To fabricate and characterize flexible CBRAM devices on a polyimide substrate using a low-thermal-budget process.
  • To investigate the memory characteristics, conduction mechanism, and flexibility of the fabricated CBRAM devices.

Main Methods:

  • Fabrication of a Cu/TiW/Ga2O3/Pt stack on a polyimide substrate via a low-temperature process.
  • Evaluation of memory characteristics including memory window, operation voltage, endurance, and retention.
  • Analysis of the conduction mechanism using temperature coefficient of resistance measurements.
  • Testing the device performance under mechanical flexibility stress.

Main Results:

  • The flexible CBRAM devices demonstrated a large memory window (>10^5), low operation voltage, and high endurance (>1.4 x 10^2 cycles).
  • Temperature coefficient of resistance analysis confirmed an electrochemical metallization (ECM) conduction mechanism in the Ga2O3 layer.
  • Device performance remained stable and unaffected by flexibility tests.
  • The low-temperature fabrication process is compatible with flexible substrates.

Conclusions:

  • The fabricated flexible CBRAM devices exhibit excellent memory characteristics and mechanical stability.
  • The observed ECM mechanism in Ga2O3 is suitable for reliable memory operation.
  • These findings highlight the potential of low-temperature fabricated CBRAM for flexible integrated electronic circuits.