Compensating Circuit to Reduce the Impact of Wire Resistance in a Memristor Crossbar-Based Perceptron Neural Network

Wire resistance in metal wire is one of the factors that degrade the performance of memristor crossbar circuits. In this paper, an analysis of the impact of wire resistance in a memristor crossbar is performed and a compensating circuit is proposed to reduce the impact of wire resistance in a memristor crossbar-based perceptron neural network. The goal of the analysis is to figure out how wire resistance influences the output voltage of a memristor crossbar. It emerges that the wire resistance on horizontal lines causes the neuron's output voltage to vary more than the wire resistance on vertical lines. More interesting, the voltage variation caused by wire resistance on horizontal lines increases proportionally to the length of metal wire. The first column has small voltage variation whereas the last column has large voltage variation. In addition, two adjacent columns have almost the same amount of voltage variation. Under these observations, a memristor crossbar-based perceptron neural network with compensating circuit is proposed. The neuron's outputs of two columns are put into a subtractor circuit to eliminate the voltage variation caused by the wire resistance. The proposed memristor crossbar-based perceptron neural network is trained to recognize the 26 characters. The proposed memristor crossbar shows better recognition rate compared to the previous work when wire resistance is taken into account. The proposed memristor crossbar circuit can maintain the recognition rate as high as 100% when wire resistance is as high as 2.5 Ω. By contrast, the recognition rate of the memristor crossbar without the compensating circuit decreases by 1%, 5%, and 19% when wire resistance is set to be 1.5, 2.0, and 2.5 Ω, respectively.