Related Experiment Video
Updated: Mar 31, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary
Son Ngoc Truong1, SangHak Shin2, Sang-Don Byeon3
1School of Electrical Engineering, Kookmin University, 77, Jeongneung-ro, Seongbuk-gu, Seoul, 136-702, South Korea. sontn@kookmin.ac.kr.
Abstract:
This paper performs a comparative study on the statistical-variation tolerance between two crossbar architectures which are the complementary and twin architectures. In this comparative study, 10 greyscale images and 26 black-and-white alphabet characters are tested using the circuit simulator to compare the recognition rate with varying statistical variation and correlation parameters.As with the simulation results of 10 greyscale image recognitions, the twin crossbar shows better recognition rate by 4 % on average than the complementary one, when the inter-array correlation = 1 and intra-array correlation = 0. When the inter-array correlation = 1 and intra-array correlation = 1, the twin architecture can recognize better by 5.6 % on average than the complementary one.Similarly, when the inter-array correlation = 1 and intra-array correlation = 0, the twin architecture can recognize 26 alphabet characters better by 4.5 % on average than the complementary one. When the inter-array correlation = 1 and intra-array correlation = 1, the twin architecture is better by 6 % on average than the complementary one. By summary, we can conclude that the twin crossbar is more robust than the complementary one under the same amounts of statistical variation and correlation.
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
McNemar's Test
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Equivalent Capacitance
The following strategies are adopted to calculate...

