AgNWs/AZO composite electrode for transparent inverted ZnCdSeS/ZnS quantum dot light-emitting diodes
Xiaohong Jiang1, Zhiyao Song1, Guo Liu1
1Key Lab for Special Functional Materials, Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, People's Republic of China.
None:
Fully transparent inverted quantum dot light-emitting diodes (QLEDs) were fabricated by incorporating a Ag-nanowire-based anode. Aluminum-doped zinc oxide (ZnO:Al, AZO) was inserted by atomic layer deposition and reduced the sheet resistance by promoting adhesion of Ag nanowires (AgNWs) film and increasing its chemical stability towards oxygen. The performance of the QLEDs was optimal when the thickness of AZO was 20 nm. The current efficiency of the fully transparent inverted QLEDs integrated with the AgNWs/AZO anode reached 15.33 cd A-1. The main peak wavelength and optical transmittance of the inverted QLEDs were 530 nm and 75.66%, respectively. This discovery is expected to provide a basic method for the production of flexible displays with full transparency by AgNWs-based electrodes.
More Related Videos
09:32Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells
Published on: April 25, 2018
09:22Synthesis and Performance Evaluations of ZnCoS/ZnCdS with Twin Crystal Structure for Multifunctional Redox Photocatalysis in Energy Applications
Published on: July 25, 2025