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Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe
Xian-Bo Xiao1, Qian Ye2, Zheng-Fang Liu3
1School of Computer Science, Jiangxi University of Traditional Chinese Medicine, Nanchang, 330004, China. 20101034@jxutcm.edu.cn.
Applying an electric field to Indium Selenide (InSe) causes a semiconductor-to-metal transition. This transition is driven by changes in its electronic band structure, offering insights for optoelectronic device design.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Layered group III-VI semiconductors exhibit unique electronic properties.
- Understanding the impact of external stimuli on these properties is crucial for device applications.
Purpose of the Study:
- To investigate the electronic structure of monolayer Indium Selenide (InSe) under a perpendicular electric field.
- To explore the mechanisms behind observed electronic transitions and their implications.
Main Methods:
- Computational investigation of electronic band structures.
- Analysis of orbital contributions to energy bands.
- Tracking the evolution of band edges under varying electric field strengths.
Main Results:
- Monolayer InSe undergoes an indirect-direct-indirect band gap transition with increasing electric field.
- The global band gap of InSe is progressively reduced to zero.
- A semiconductor-to-metal transformation is observed in monolayer InSe.
Conclusions:
- The study reveals the electronic behavior of InSe under electric fields, including band gap closure and semiconductor-metal transition.
- Findings enhance the understanding of III-VI semiconductors and guide the development of novel optoelectronic devices.
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