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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
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Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer
Shili Yan1,2, Hai Huang3, Zhijian Xie1
1International Center for Quantum Materials , Peking University , Beijing 100871 , China.
ACS Applied Materials & Interfaces
|October 22, 2019
Summary
Researchers eliminated anti-hysteresis in black phosphorus (BP) field-effect transistors (FeFETs) using a van der Waals buffer technique. This restores intrinsic behavior, enabling stable, high-performance 2D-FeFETs for information technology.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional material-based ferroelectric field-effect transistors (2D-FeFETs) show potential for data storage.
- Anti-hysteresis in 2D-FeFETs hinders industrial application by causing unpredictable switching behavior.
Purpose of the Study:
- To eliminate anti-hysteresis in black phosphorus (BP) 2D-FeFETs.
- To restore the intrinsic hysteretic behavior of BP 2D-FeFETs.
- To enhance the performance and stability of 2D-FeFETs for information technology.
Main Methods:
- Development and application of a van der Waals buffer technique.
- Fabrication of modified black phosphorus 2D-FeFETs.
- Characterization of device performance, including carrier mobility, bistable states, on/off ratio, memory window, and retention time.
Main Results:
- The van der Waals buffer technique successfully eliminated anti-hysteresis in BP 2D-FeFETs.
- Modified devices exhibited high room-temperature carrier mobility and robust bistable states.
- Significantly improved memory window stability (∼7000 times more stable) and long retention times were achieved.
Conclusions:
- The van der Waals buffer technique is effective in overcoming anti-hysteresis in 2D-FeFETs.
- This method enables the utilization of intrinsic properties of 2D-FeFETs for advanced information technologies.
- The enhanced stability and performance pave the way for practical applications of 2D-FeFETs.
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