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Measuring Band Modulation of MoS2 with Ferroelectric Gates
Xinzuo Sun1, Yan Chen2,3, Dongyang Zhao3
1School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
Nano Letters
|March 3, 2023
Summary
Ferroelectric gates tune two-dimensional (2D) material electronic properties. This study shows ferroelectric gates significantly alter molybdenum disulfide (MoS2) band structure, impacting optical absorption and quantum well subbands.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) materials exhibit tunable electronic properties via external electric fields.
- Ferroelectric materials offer strong polarization electric fields for gate modulation.
Purpose of the Study:
- To investigate the band structure modulation of few-layer molybdenum disulfide (MoS2) using a ferroelectric gate.
- To demonstrate the potential of ferroelectric gates for manipulating 2D material electronic properties.
Main Methods:
- Contact-mode scanning tunneling spectroscopy was employed to measure the band structure.
- Few-layer MoS2 was modulated by a polarized polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE)) ferroelectric gate.
Main Results:
- An electric field of up to ~0.62 V/nm was applied, significantly affecting the MoS2 band structure.
- Strong vertical band bending, indicative of the Franz-Keldysh effect, extended the optical absorption edge.
- Energy separations between quantum-well subbands were substantially increased.
Conclusions:
- Ferroelectric gates effectively manipulate the band structure of 2D materials like MoS2.
- The observed effects demonstrate the potential for advanced electronic and optoelectronic device applications.
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