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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
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A gated quantum dot strongly coupled to an optical microcavity
Daniel Najer1, Immo Söllner2, Pavel Sekatski2
1Department of Physics, University of Basel, Basel, Switzerland. daniel.najer@unibas.ch.
Nature
|October 22, 2019
Summary
We developed a tunable microcavity for quantum dot light-matter interactions, achieving strong coupling and vacuum Rabi oscillations for quantum photonics applications.
Area of Science:
- Quantum optics
- Cavity quantum electrodynamics (QED)
- Solid-state implementations
Background:
- Strong coupling in cavity QED demonstrates quantum light-matter interaction.
- Semiconductor quantum dots offer potential for optical frequency gates.
- Miniaturizing cavities faces challenges with charge noise and scattering losses.
Purpose of the Study:
- To present a gated, ultralow-loss, frequency-tunable microcavity device.
- To enable electrical control over quantum dot charge and resonance frequency.
- To eliminate cavity feeding and achieve near-radiative linewidths for quantum dots.
Main Methods:
- Utilized a gated microcavity device for electrical tuning.
- Minimized losses and charge noise in the semiconductor cavity.
- Employed photon-statistics spectroscopy to probe photon-atom systems.
Main Results:
- Demonstrated electrical control of quantum dot charge and frequency.
- Eliminated cavity feeding, achieving near-radiative linewidths.
- Observed vacuum Rabi oscillations, indicating coherent energy exchange.
Conclusions:
- Established a route for semiconductor-based quantum photonics.
- The device facilitates development of single-photon sources and photon-photon gates.
- Coherent light-matter interaction was achieved and exploited for spectroscopy.
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