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Updated: Jan 5, 2026
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface
Kangping Liu1, Odile Cristini-Robbe2, Omar Ibrahim Elmi3
1Key Laboratory of Advanced Display and System Application, Shanghai University, Shanghai, 200072, China.
Abstract:
Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposition (ALD) technique. This paper aims at presenting correlated structural/electrical studies for the passivation effect of alumina on Si junctions to obtain optimal thickness of alumina passivation layer. High-resolution transmission electron microscope (HRTEM) observations coupled with energy dispersive X-ray (EDX) measurements are used to determine the thickness of alumina at atomic scale. The correlated electrical parameters are measured with both solar simulator and Sinton's Suns-Voc measurements. Finally, an optimum alumina thickness of 1.2 nm is thus evidenced.
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