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Related Concept Videos

Semiconductors01:22

Semiconductors

1.3K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.3K
Types of Semiconductors01:20

Types of Semiconductors

1.3K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.3K
P-N junction01:11

P-N junction

1.1K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.1K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

850
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
850
Schottky Barrier Diode01:27

Schottky Barrier Diode

888
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
888
Fermi Level01:18

Fermi Level

1.5K
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
1.5K

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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Quest for p-Type Two-Dimensional Semiconductors.

Qiyuan He1, Yuan Liu2, Chaoliang Tan1

  • 1Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798 , Singapore.

ACS Nano
|November 2, 2019
PubMed
Summary
This summary is machine-generated.

Discovering p-type two-dimensional (2D) semiconductors is crucial for advanced nanotechnologies. This perspective explores methods to achieve p-type conductivity in 2D materials, including direct synthesis of novel semiconductors.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) semiconductors are vital for next-generation electronics, spintronics, and catalysis.
  • Most known 2D semiconductors exhibit n-type or ambipolar behavior, limiting their application.
  • A scarcity of p-type 2D semiconductors hinders device development.

Purpose of the Study:

  • To review strategies for achieving p-type conductivity in 2D semiconductors.
  • To highlight recent advancements in the direct synthesis of p-type 2D materials.
  • To provide a comprehensive overview for researchers in the field.

Main Methods:

  • Discussion of doping and defect engineering techniques for n-type/ambipolar 2D materials.
  • Analysis of synthetic routes for intrinsically p-type 2D semiconductors.
  • Literature review and synthesis of current research trends.

Main Results:

  • Identification of key strategies to induce p-type behavior in existing 2D materials.
  • Highlighting successful direct synthesis of p-type 2D semiconductors like black phosphorus, 2D tellurium, and α-MnS.
  • Demonstration of the growing potential for p-type 2D materials.

Conclusions:

  • Overcoming the p-type 2D semiconductor bottleneck is essential for advancing nanotechnologies.
  • Direct synthesis offers a promising avenue for discovering new p-type 2D materials.
  • Continued research in this area will unlock novel electronic and optoelectronic applications.