Related Experiment Video
Updated: Jan 4, 2026
In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells
Published on: October 3, 2018
Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time
Jiseong Jang1, Sangyeob Lee1,2, Choong-Heui Chung1,2
1Department of Materials and Manufacturing Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
Abstract:
Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (i ) measurement has been used to extract depth-resolved L profiles, where L is the minority carrier collection length by diffusion. The extracted L depth-profiles can be used to determine the minority carrier diffusion length and back-surface recombination velocity in Cu(In,Ga)Se2 (CIGS) thin film solar cells (Chung, 2019). During the measurement of i , the CIGS thin film is generally exposed to air. The CIGS thin films can be degraded by air exposure (Metzger et al., 2009). Therefore, it will be helpful to know the effect of air exposure time of CIGS thin films on the i values to properly estimate the electrical quality of CIGS thin films.
