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Updated: Jan 4, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Edward L Pang1, Peter M Larsen1, Christopher A Schuh1
1Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139, USA.
Determining accurate pattern centers in electron backscatter diffraction (EBSD) is challenging due to a "sloppy" and noisy parameter landscape. A new method combining global search and pattern averaging improves accuracy for EBSD pattern center determination.
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