Global optimization for accurate determination of EBSD pattern centers
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Updated: Jan 4, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Edward L Pang1, Peter M Larsen1, Christopher A Schuh1
1Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139, USA.
Abstract:
Accurate pattern center determination has long been a challenge for the electron backscatter diffraction (EBSD) community and is becoming critically accuracy-limiting for more recent advanced EBSD techniques. Here, we study the parameter landscape over which a pattern center must be fitted in quantitative detail and reveal that it is both "sloppy" and noisy, which limits the accuracy to which pattern centers can be determined. To locate the global optimum in this challenging landscape, we propose a combination of two approaches: the use of a global search algorithm and averaging the results from multiple patterns. We demonstrate the ability to accurately determine pattern centers of simulated patterns, inclusive of effects of binning and noise on the error of the fitted pattern center. We also demonstrate the ability of this method to accurately detect changes in pattern center in an experimental dataset with noisy and highly binned patterns. Source code for our pattern center fitting algorithm is available online.

