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Gate stimulated high-performance MoS2-In(OH) x Se phototransistor
Mengxing Sun1, Haowen Hu2, Dan Xie1
1Institute of Microelectronics & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, People's Republic of China.
Nanotechnology
|November 16, 2019
Summary
This study introduces a novel hybrid phototransistor combining MoS2 film and In(OH)xSe nanoparticles. The new design significantly enhances photoresponsivity and photoresponse speed for advanced photodetector applications.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Two-dimensional (2D) materials like graphene and MoS2 are promising for photodetection.
- Balancing photoresponsivity and photoresponse speed in hybrid photodetectors remains a challenge.
Purpose of the Study:
- To develop a hybrid phototransistor with improved photoresponsivity and response speed.
- To overcome the trade-off between key photodetector performance metrics.
Main Methods:
- Fabrication of a hybrid phototransistor using MoS2 film and In(OH)xSe nanoparticles.
- Utilizing combined photoconducting and photogating effects.
- Applying a 2 ms gate voltage pulse for rapid current recovery.
Main Results:
- Achieved a photoresponsivity of 102 A W-1, an order of magnitude increase.
- Enhanced photocurrent to dark current ratio to 104.
- Demonstrated complete current recovery using a pulsed gate voltage.
Conclusions:
- The hybrid MoS2/In(OH)xSe structure offers superior photodetector performance.
- Simultaneous application of photoconducting, photogating, and gate voltage stimulation is key.
- This approach holds potential for future high-performance photodetector development.
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