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Impact of Line Edge Roughness on ReRAM Uniformity and Scaling.

Vassilios Constantoudis1,2, George Papavieros1,2, Panagiotis Karakolis1,3

  • 1Institute of Nanoscience and Nanotechnology, NCSR Demokritos, 15341 Aghia Paraskevi, Greece.

Materials (Basel, Switzerland)
|December 6, 2019
PubMed
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This summary is machine-generated.

Line Edge Roughness (LER) in Resistive Random Access Memory (ReRAM) can cause over 10% area variability. Advanced lithography techniques reducing edge correlations significantly improve uniformity in cross-point architectures.

Area of Science:

  • Semiconductor Device Physics
  • Materials Science
  • Nanotechnology

Background:

  • Resistive Random Access Memory (ReRAM) is a promising non-volatile memory technology.
  • Uniformity of device area is critical for reliable performance in cross-point architectures.
  • Line Edge Roughness (LER) in electrode patterning is a key factor influencing device uniformity.

Purpose of the Study:

  • To investigate the impact of Line Edge Roughness (LER) on Resistive Random Access Memory (ReRAM) device area uniformity.
  • To quantify the variability induced by LER in cross-point architectures.
  • To identify critical parameters and lithography conditions affecting device performance.

Main Methods:

  • A modeling approach was developed to generate 2D cross-point patterns.
Keywords:
Line Edge Roughness (LER)Resistive Random Access Memory (ReRAM)lithographymodelinguniformityvariability

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  • Predefined and controlled LER and pattern parameters were utilized.
  • Numerical simulations were performed to evaluate area variability and performance.

    • Main Results:

    • Conventional LER parameters can lead to over 10% area variability, dependent on pattern dimensions.
    • Increased edge correlations in electrode lines reduce area variability.
    • Lithography techniques like Double Patterning and Directed Self-assembly show reduced variability.

    Conclusions:

    • LER significantly impacts ReRAM device area uniformity in cross-point architectures.
    • Controlling edge correlations through advanced lithography is crucial for enhancing device consistency.
    • A theoretical formula was derived to model the relationship between LER and area variability.