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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

Zhonghao Sun1, Huolin Huang1, Nan Sun1

  • 1School of Optoelectronic Engineering and Instrumentation Science & School of Microelectronics, Dalian University of Technology, Dalian 116024, China.

Micromachines
|December 11, 2019
PubMed

Keywords:
gallium nitridehigh electron mobility transistorsnormally-off operationvertical gate structurewide-bandgap semiconductor

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