Quantum nanophotonics with group IV defects in diamond

Area of Science:

• Quantum photonics
• Solid-state quantum applications
• Materials science

Background:

• Diamond photonics research is expanding, focusing on color centers for quantum hardware.
• The nitrogen-vacancy (NV) center has been dominant, enabling key physics demonstrations and practical applications.
• Recently, group IV color centers (Si-, Ge-, Sn-, Pb-vacancies) have emerged as promising alternatives.

Purpose of the Study:

• To review techniques for engineering and characterizing group IV color centers in diamond.
• To discuss the current status of devices utilizing these group IV defects.
• To provide an outlook on future research directions in diamond-based solid-state quantum photonics.

Main Methods:

• Highlighting leading techniques for defect engineering in diamond.
• Reviewing characterization methods for diamond color centers.
• Surveying state-of-the-art group IV-based quantum devices.

Main Results:

• Group IV color centers present a new class of defects for quantum applications.
• Established techniques are being adapted for these novel diamond defects.
• Emerging devices show potential for advanced quantum functionalities.

Conclusions:

• Group IV color centers are poised to significantly impact solid-state quantum photonics.
• Further development in engineering and characterization will accelerate their adoption.
• Diamond-based quantum technologies are advancing with these new defect systems.