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Enhanced interfacial Dzyaloshinskii-Moriya interactions in annealed Pt/Co/MgO structures
Anni Cao1,2, Runze Chen1, Xinran Wang1
1Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing 100191, People's Republic of China.
Nanotechnology
|December 18, 2019
Summary
Researchers achieved a giant interfacial Dzyaloshinskii-Moriya interaction (iDMI) up to 3.3 mJ m-2 in Pt/Co/X/MgO films. This significant iDMI is crucial for developing smaller skyrmions and optimizing spintronic devices.
Area of Science:
- Spintronics
- Materials Science
- Condensed Matter Physics
Background:
- The interfacial Dzyaloshinskii-Moriya interaction (iDMI) is critical for spintronic applications.
- Achieving iDMI constants greater than 3 mJ m-2 is essential for minimizing skyrmion size and enhancing domain-wall dynamics.
Purpose of the Study:
- To experimentally demonstrate and enhance giant iDMI in ultra-thin film structures.
- To investigate the role of inserted materials (Ta, Mg) and thermal annealing on iDMI.
- To understand the underlying physics of iDMI enhancement using ab-initio calculations.
Main Methods:
- Fabrication of Pt/Co/X/MgO ultra-thin films with perpendicular magnetization.
- Measurement of iDMI constants using a field-driven creep regime domain expansion method.
- Ab-initio calculations to understand iDMI enhancement mechanisms.
- Thermal annealing to crystallize MgO and improve tunneling magnetoresistance (TMR).
Main Results:
- Demonstration of a giant iDMI in Pt/Co/X/MgO structures.
- Significant enhancement of iDMI observed with atomically thin insertions of Ta and Mg.
- Further increase in iDMI constant up to 3.3 mJ m-2 after thermal annealing.
- Correlation between MgO crystallization, improved TMR, and increased iDMI.
Conclusions:
- The study successfully achieved and enhanced giant iDMI in a promising material system.
- Atomic-scale engineering and post-processing (thermal annealing) are effective strategies for boosting iDMI.
- The achieved iDMI values are highly promising for the development of next-generation skyrmion-based spintronic devices.

