Related Experiment Video
Updated: Dec 31, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Proximity-Induced Superconductivity in Monolayer MoS2
Daniel J Trainer1, BaoKai Wang2, Fabrizio Bobba1,3
1Physics Department, Temple University, Philadelphia, Pennsylvania 19122, United States.
Abstract:
Proximity effects in superconducting normal (SN) material heterostructures with metals and semiconductors have long been observed and theoretically described in terms of Cooper pair wave functions and Andreev reflections. Whereas the semiconducting N-layer materials in the proximity experiments to date have been doped and tens of nanometers thick, we present here a proximity tunneling study involving a pristine single-layer transition-metal dichalcogenide film of MoS2 placed on top of a Pb thin film. Scanning tunneling microscopy and spectroscopy experiments together with parallel theoretical analysis based on electronic structure calculations and Green's function modeling allow us to unveil a two-step process in which MoS2 first becomes metallic and then is induced into becoming a conventional s-wave Bardeen-Cooper-Schrieffer-type superconductor. The lattice mismatch between the MoS2 overlayer and the Pb substrate is found to give rise to a topographic moiré pattern. Even though the induced gap appears uniform in location, the coherence peak height of the tunneling spectra is modulated spatially into a moiré pattern that is similar to but shifted with respect to the moiré pattern observed in topography. The aforementioned modulation is shown to originate from the atomic-scale structure of the SN interface and the nature of local atomic orbitals that are involved in generating the local pairing potential. Our study indicates that the local modulation of induced superconductivity in MoS2 could be controlled via geometrical tuning, and it thus shows promise toward the integration of monolayer superconductors into next-generation functional electronic devices by exploiting proximity-effect control of quantum phases.
Related Concept Videos
Types Of Superconductors
Superconductor
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

