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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and

Enrique G Marin1,2, Damiano Marian1, Marta Perucchini1

  • 1Dipartimento di Ingegneria dell'Informazione , Università di Pisa , 56122 Pisa , Italy.

ACS Nano
|January 15, 2020
PubMed

Keywords:
energy filtering sourcefield-effect transistorlateral heterostructuresmultiscale simulationssub-60 mV/decade subthreshold swingtwo-dimensional materials

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