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Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes.

Chin-An Hsieh¹, Chia-Ming Tsai¹, Bing-Yue Tsui¹

¹Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan.

Sensors (Basel, Switzerland)

|January 17, 2020

Summary

This summary is machine-generated.

We developed a simulation to predict single-photon avalanche diode (SPAD) sensitivity (PDP) without fitting parameters. This method optimizes SPAD photon-detection probability before fabrication, saving time and cost.

Keywords:

CMOS technology photon-detection probability single-photon avalanche diode (SPAD)

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Area of Science:

Photonics and Semiconductor Devices
Integrated Circuit Design

Background:

Single-photon avalanche diodes (SPADs) fabricated in CMOS technology offer excellent timing resolution for single-photon detection.
Photon-detection probability (PDP) is a critical metric for SPAD sensitivity, but its optimization is hindered by complex and costly fabrication processes.

Purpose of the Study:

To develop a parameter-free simulation procedure for accurately predicting the PDP of CMOS SPADs.
To provide an effective method for optimizing SPAD PDP before experimental fabrication, reducing development time and costs.

Main Methods:

Integrated process, electrical, and optical simulations using commercial software.
Incorporated breakdown trigger probability calculations.
Validated simulation results against experimental data from 800-nm CMOS technology SPADs.

Main Results:

Achieved good agreement between simulated and experimental PDP for wavelengths longer than 600 nm.
Identified and discussed potential reasons for discrepancies at shorter wavelengths.
Demonstrated a reliable simulation approach for PDP prediction.

Conclusions:

The developed simulation procedure effectively predicts SPAD PDP without requiring fitting parameters.
This simulation-based approach offers a viable strategy for optimizing SPAD performance prior to fabrication, particularly for wavelengths above 600 nm.