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Related Concept Videos

Quality Assurance01:19

Quality Assurance

250
Quality assurance is the overarching term used to describe the activities employed to ensure the proper performance of a system. These activities can be classified into three categories: quality control, quality assessment, and internal corrective measures. Typically, these activities work cyclically: quality control is performed before and during the analysis, while quality assessment occurs during and after the investigation. Internal corrective measures are implemented based on the findings...
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Defect Inspection Techniques in SiC.

Po-Chih Chen1, Wen-Chien Miao2,3, Tanveer Ahmed1

  • 1Institute of Electronics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.

Nanoscale Research Letters
|March 4, 2022
PubMed
Summary
This summary is machine-generated.

High costs and low yields in silicon carbide (SiC) device manufacturing stem from killer defects. This review explores SiC defect inspection technologies and solutions for mass production of high-quality SiC devices.

Keywords:
Defect inspection technologyKiller defectSiC

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Area of Science:

  • Materials Science
  • Semiconductor Manufacturing
  • Device Physics

Background:

  • Silicon carbide (SiC) power devices offer superior performance over silicon-based alternatives, driving increased demand.
  • High manufacturing costs and low yields remain significant challenges in SiC production.
  • Killer defects, originating during crystal growth, critically impact SiC device performance and reliability.

Purpose of the Study:

  • To provide an overview of current silicon carbide defect inspection technologies.
  • To analyze the impact of killer defects on SiC device performance.
  • To discuss potential solutions for improving inspection techniques and reducing defect density for mass production.

Main Methods:

  • Review of existing literature on SiC crystal growth and defect formation.
  • Analysis of various post-growth inspection techniques for defect identification and localization.
  • Discussion of strategies for defect density reduction and yield improvement in SiC manufacturing.

Main Results:

  • Defect inspection is a critical necessity for identifying and locating killer defects in SiC manufacturing.
  • The presence of defects significantly influences the performance and reliability of SiC power devices.
  • Improvements in growth techniques and post-growth inspection are essential for addressing current manufacturing challenges.

Conclusions:

  • Advanced defect inspection technologies are crucial for the mass production of high-quality SiC devices.
  • Reducing defect density through improved growth and inspection methods is key to lowering costs and increasing yields.
  • This review highlights pathways to enhance SiC manufacturing processes for wider adoption of advanced power electronics.