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Published on: March 19, 2017
Interfacial Contact Passivation for Efficient and Stable Cesium-Formamidinium Double-Cation Lead Halide Perovskite
Yu Chen1, Jianchao Yang1, Shubo Wang2
1Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou, Jiangsu 213164, China; Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, 596 Yinhe Road, Shuangliu, Chengdu 610200, China.
Abstract:
Perovskite solar cells (PSCs) have achieved extremely high power conversion efficiencies (PCEs) of over 25%, but practical application still requires further improvement in the long-term stability of the device. Herein, we present an in situ interfacial contact passivation strategy to reduce the interfacial defects and extraction losses between the hole transporting layer and perovskite. The existence of PbS promotes the crystallization of perovskite, passivates the interface and grain boundary defects, and reduces the nonradiation recombination, thereby leading to a champion PCE of 21.07% with reduced hysteresis, which is one of the best results for the methylammonium (MA)-free, cesium formamidinium double-cation lead-based PSCs. Moreover, the unencapsulated device retains more than 93% and 82% of its original efficiencies after 1 year's storage under ambient conditions and thermal aging at 85°C for 1,000 h in a nitrogen atmosphere, likely due to the usage of MA-free perovskite and the enhanced surface hydrophobicity.
