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Pulsed power technology based on semiconductor opening switches: A review.

¹Institute of Electrophysics, UB, RAS, Yekaterinburg 620016, Russia.

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|February 5, 2020

Summary

Researchers reviewed 25 years of nanosecond high-power pulse production using solid-state generators. The Semiconductor Opening Switch (SOS) effect enables megavolt voltages and gigawatt peak powers for advanced applications.

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Area of Science:

Physics
Electrical Engineering
Materials Science

Background:

Research on nanosecond high-power pulse generation using solid-state devices has advanced significantly.
The discovery of the Semiconductor Opening Switch (SOS) effect in the early 1990s revolutionized semiconductor generator capabilities.

Purpose of the Study:

To provide a systematized review of research on nanosecond high-power pulse production using inductive energy stores and semiconductor opening switches over the past 25 years.
To discuss the physical mechanisms, operational principles, and design of SOS diodes and generators.

Main Methods:

Systematized literature review of research conducted from 1992-1993 onwards.
Analysis of physical processes governing the SOS effect and its application in pulse generators.

Main Results:

The SOS effect has enabled tens to hundreds of times increase in pulse power and output voltage compared to previous semiconductor generators.
Achieved megavolt voltages and gigawatt peak powers in nanosecond semiconductor technology.
Demonstrated successful applications in electron accelerators, X-ray devices, high-power microwave electronics, gas laser pumping, and electrical discharge ignition.

Conclusions:

The SOS effect is a critical breakthrough for high-power semiconductor pulse generators.
SOS generators offer significant advancements in performance and have diverse applications.
Further development prospects for SOS technology are promising.