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Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2.7 stoichiometry with high ion
Jongwon Lee1, Revannath Dnyandeo Nikam1, Seokjae Lim1
1Center for Single Atom-based Semiconductor Device and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea.
Nanotechnology
|February 25, 2020
Summary
Researchers developed a novel lithium-ion synapse device using tungsten oxide (WOx). The study highlights WO2.7 stoichiometry for enhanced synaptic function, improving ion movement and device performance.
Area of Science:
- Materials Science
- Neuroscience
- Electrical Engineering
Background:
- Artificial synapse devices are crucial for neuromorphic computing.
- Lithium-ion-based synaptic transistors offer promising characteristics but face challenges with transient conductance changes.
Purpose of the Study:
- To introduce a novel lithium (Li) ion-based three-terminal (3-T) synapse device.
- To investigate the role of tungsten oxide (WOx) stoichiometry on synaptic properties.
- To address transient conductance changes in ion-based synaptic transistors.
Main Methods:
- Fabrication of a 3-T synapse device with a WOx channel.
- Stoichiometry optimization to WO2.7.
- Analysis of Li-ion diffusivity using X-ray photoelectron spectroscopy and cyclic voltammetry.
- Implementation of a two-step voltage pulse scheme to manage conductance changes.
Main Results:
- Identified WO2.7 stoichiometry as optimal for synaptic characteristics, linked to Li-ion diffusivity.
- Demonstrated that oxygen deficiency in WOx creates an open-lattice structure, enhancing Li-ion injection and diffusion.
- Successfully resolved transient conductance changes, achieving symmetric and linear weight updates with reduced operation times.
Conclusions:
- The optimized WO2.7 stoichiometry and enhanced Li-ion diffusivity are key to high-performance artificial synapses.
- The proposed two-step voltage pulse scheme effectively mitigates transient conductance issues in ion-based synaptic transistors.
- This work advances the development of efficient and reliable neuromorphic computing hardware.

