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Updated: Dec 27, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
The Parametric Study of Armchair Graphene Nanoribbon Field Effect Transistor by Non-Equilibrium Green's Function
1Department of Electrical Engineering, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of Korea; Hur Advanced Research, 96, Dongtanbanseok-ro, Hwaseong-si, Gyeonggi-do, 18456, Republic of Korea.
Abstract:
We have carried out a comprehensive parametric analysis on the potential performance of a graphene nanoribbon field effect transistor (GNRFET). We modeled the behavior of GNRFETs with nanometer width GNR channels to formulate a self-consistent, non-equilibrium Green's function (NEGF) scheme in conjunction with the Poisson equation and allow the GNRFET to operate as a switch. Based on the results, we propose a metric to compete with current silicon CMOS highperformance (HP) or low-power (LP) devices, explaining that this can vary widely depending on the GNRFET structure parameters.
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