Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor.

Area of Science:

• Semiconductor device physics
• Solid-state electronics
• Computational modeling

Background:

• Silicon-on-Insulator Junctionless Field-Effect Transistors (SOI-JLFETs) are crucial for modern electronics.
• Accurate device models are essential for circuit simulation and design.
• Existing models may lack simplicity or accuracy under various operating conditions.

Purpose of the Study:

• To propose a novel, accurate, and simple current-voltage (I-V) model for SOI-JLFETs.
• To provide a model based on the solution of the Poisson equation for improved physical insight.
• To facilitate the integration of SOI-JLFETs into circuit simulations.

Main Methods:

• Solving the Poisson equation to determine charge density in accumulation, accumulation-depletion, and depletion regions.
• Integrating charge density, considering the drain-source voltage (Vds) effect, to derive the current.
• Implementing the model in HSPICE using Verilog-A hardware description language.
• Validating the model against Technology Computer-Aided Design (TCAD) simulations.

Main Results:

• The proposed model accurately describes SOI-JLFET behavior across three distinct operating regions.
• Validation against TCAD simulations confirms the model's accuracy for varying SOI channel thickness, gate oxide thickness, and doping concentrations.
• Error rate calculations demonstrate a model accuracy exceeding 90%.

Conclusions:

• The developed I-V model offers a significant improvement in accuracy and simplicity for SOI-JLFETs.
• The model's physical basis, derived from the Poisson equation, enhances understanding of device operation.
• This validated model is suitable for use in circuit simulators like HSPICE, aiding in the design and optimization of electronic circuits employing SOI-JLFETs.