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Extremely Sensitive Microwave Sensor for Evaluation of Dielectric Characteristics of Low-Permittivity Materials
Tanveerul Haq1, Cunjun Ruan1,2, Xingyun Zhang1
1School of Electronic and Information Engineering, Beihang University, Beijing 100191, China.
Abstract:
In this paper, an extremely sensitive microwave sensor is designed based on a complementary symmetric S shaped resonator (CSSSR) to evaluate dielectric characteristics of low-permittivity material. CSSSR is an artificial structure with strong and enhanced electromagnetic fields, which provides high sensitivity and a new degree of freedom in sensing. Electromagnetic simulation elucidates the effect of real relative permittivity, real relative permeability, dielectric and magnetic loss tangents of the material under test (MUT) on the resonance frequency and notch depth of the sensor. Experiments are performed at room temperature using low-permittivity materials to verify the concept. The proposed design provides differential sensitivity between 102% to 95% as the relative permittivity of MUT varies from 2.1 to 3. The percentage error between simulated and measured results is less than 0.5%. The transcendental equation has been established by measuring the change in the resonance frequency of the fabricated sensor due to interaction with the MUT.
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