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Updated: Dec 25, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
A One-Dimensional Effective Model for Nanotransistors in Landauer-Büttiker Formalism
1Department of Computational Physics, Brandenburg University of Technology Cottbus-Senftenberg, PO box 101344, 03013 Cottbus, Germany.
Abstract:
In a series of publications, we developed a compact model for nanotransistors in which quantum transport in a variety of industrial nano-FETs was described quantitatively. The compact nanotransistor model allows for the extraction of important device parameters as the effective height of the source-drain barrier, device heating, and the quality of the coupling between conduction channel and the contacts. Starting from a basic description of quantum transport in a multi-terminal device in Landauer-Büttiker formalism, we give a detailed derivation of all relevant formulas necessary to construct our compact nanotransistor model. Here we make extensive use of the the R-matrix method.
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