Transport in a Two-Channel Nanotransistor Device with Lateral Resonant Tunneling

Area of Science:

• Solid State Physics
• Quantum Electronics
• Nanotechnology

Background:

• Field effect nanotransistors (FETs) are crucial for modern electronics.
• Lateral resonant tunneling in nanostructures offers potential for low-power devices.
• Si/SiO2 material systems are widely used in semiconductor technology.

Purpose of the Study:

• To investigate lateral resonant tunneling in Si/SiO2 nanotransistors.
• To analyze quantum transport properties using the R-matrix approach.
• To explore the potential for low-energy electronic applications.

Main Methods:

• Development of a piecewise linear potential model.
• Application of the R-matrix method for quantum transport calculations.
• Comparison of analytical approximations with full numerical simulations.

Main Results:

• Observation of a narrow resonant tunneling peak near zero control voltage in transfer characteristics.
• Demonstration that the resonant tunneling peak persists at room temperature.
• Identification of efficient current switching with small control voltages.

Conclusions:

• Si/SiO2 nanotransistors based on lateral resonant tunneling are promising for low-energy electronics.
• The observed room-temperature persistence of the tunneling peak is a significant advantage over previous III-V systems.
• The R-matrix method provides a fundamental understanding of lateral tunneling transport in planar systems.