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Bistable Boron-Related Defect Associated with the Acceptor Removal Process in Irradiated p-Type Silicon-Electronic

Andrei Nitescu1, Cristina Besleaga1, George Alexandru Nemnes2,3

  • 1National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Ilfov, Romania.

Sensors (Basel, Switzerland)
|July 8, 2023
PubMed

Keywords:
LGADTSC techniqueacceptor removalbistable defectboron-doped irradiated siliconconfigurational transformationsradiation hard detectors

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