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Updated: Jun 26, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Chia-Hao Lee1, Abid Khan2, Di Luo2
1Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States.
We developed a deep learning method to precisely measure atomic strain fields in 2D materials like WSe2Te2. This technique overcomes radiation damage limitations in electron microscopy, revealing defect-induced lattice changes with sub-picometer accuracy.
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