Grain Boundary Induced Ultralow Threshold Random Laser in a Single GaTe Flake

Zuxin Chen1,2, Yingjun Zhang3, Sheng Chu4

  • 1Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.

Summary

Researchers developed a new random laser (RL) using polycrystalline Gallium Telluride (GaTe) microflakes. This novel random laser achieves an ultra-low lasing threshold, making it suitable for optoelectronic applications.

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