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Updated: Dec 23, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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Point defect induced intervalley scattering for the enhancement of interlayer electron transport in bilayer MoS2

Yang Ou1, Zhuo Kang2, Qingliang Liao2

  • 1Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, People's Republic of China. zhangzheng@ustb.edu.cn yuezhang@ustb.edu.cn.

Nanoscale
|April 29, 2020
PubMed

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