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Updated: Dec 22, 2025
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic
Soraya Rahpeima1, Essam M Dief2, Chandramalika R Peiris2
1School of Molecular and Life Sciences, Curtin Institute of Functional Molecules and Interfaces, Curtin University, Bentley, WA 6102, Australia. nadim.darwish@curtin.edu.au and Flinders Institute for Nanoscale Science and Technology, College of Science and Engineering, Flinders University, Adelaide, SA 5001, Australia. colin.raston@flinders.edu.au.
Abstract:
Metal-semiconductor junctions are essential contacts for semiconductor devices, but high contact junction resistance is a limiting operational factor. Here, we establish an ohmic contact of low resistance of <4 × 10-6 Ω cm2 between platinum and n-type Si (111)-H surfaces. This involved Si-O covalent bonding a monolayer of graphene oxide (GO) to the Si surface followed by electrochemical reduction to form reduced graphene oxide (rGO). Current-voltage plots demonstrate that the GO/rGO transformation is associated with a change from a rectifying to an ohmic contact. The process is a viable method for constructing semiconductor-rGO interfaces and demonstrates that GO/rGO monolayers can be used as active components in tuning the contact resistance of metal-semiconductor junctions.
