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Engineering Corner States from Two-Dimensional Topological Insulators.

Yafei Ren1,2, Zhenhua Qiao1, Qian Niu2

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Summary
This summary is machine-generated.

We demonstrate robust corner states in 2D Z_{2} topological insulators using an in-plane Zeeman field. This method creates higher-order topological phases protected by crystalline symmetries, offering experimental feasibility.

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Area of Science:

  • Condensed matter physics
  • Topological materials science
  • Quantum phenomena

Background:

  • Topological insulators possess unique electronic properties protected by time-reversal symmetry.
  • Higher-order topological insulators exhibit protected states at lower-dimensional boundaries (e.g., corners).
  • Z_{2} topological insulators are a key class of topological materials.

Purpose of the Study:

  • To theoretically demonstrate the realization of second-order topological insulators with robust corner states.
  • To investigate the role of Zeeman fields in creating higher-order topological phases.
  • To explore the experimental feasibility of these corner states.

Main Methods:

  • Theoretical modeling using the Kane-Mele model and the Bernevig-Hughes-Zhang model.
  • Application of an in-plane Zeeman field to break time-reversal symmetry.
  • Analysis of crystalline symmetries protecting higher-order topological phases.

Main Results:

  • An in-plane Zeeman field gaps out spin-helical edge states in 2D Z_{2} topological insulators.
  • Robust in-gap corner states emerge at the intersection of zigzag edges, independent of field orientation.
  • Corner states show robustness against various perturbations including out-of-plane fields and lattice imperfections.

Conclusions:

  • Second-order topological insulators with robust corner states are achievable in 2D Z_{2} topological insulators via Zeeman field.
  • Crystalline symmetries play a crucial role in protecting these higher-order topological phases.
  • The demonstrated robustness makes these corner states promising for experimental realization and potential applications.