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Effect of functional groups on microporous polymer based resistance switching memory devices
Yaru Song1, Jie Liu, Wanhui Li
1Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, Tianjin 300072, P. R. China. shengbin.lei@tju.edu.cn.
Chemical Communications (Cambridge, England)
|May 12, 2020
Summary
Two large-area microporous polymer films were synthesized, showing significant differences in memristor performance due to varied substituents, band gaps, and pore environments.
Area of Science:
- Materials Science
- Polymer Chemistry
- Nanotechnology
Background:
- Microporous polymers (MP) are crucial for advanced electronic devices.
- Memristors require precise control over material properties for optimal performance.
Purpose of the Study:
- To synthesize large-area microporous polymer films with varying substituents.
- To investigate the impact of these substituents on memristor device characteristics.
Main Methods:
- Solution/air interface synthesis of two distinct microporous polymer films.
- Fabrication and characterization of memristor devices using these films.
Main Results:
- Synthesized MP films exhibited different substituent effects.
- MP-based memristors showed an order of magnitude difference in on/off ratios.
- Turn-on voltages varied by approximately 0.2 V between devices.
Conclusions:
- Substituent-induced differences in band gap and pore environment significantly influence memristor performance.
- Tailoring polymer structure is key to optimizing memristor characteristics.
