Self-formed C-dot-based 2D polysiloxane with high photoluminescence quantum yield and stability

Guangqi Hu1, Xiaokai Xu, Bingfu Lei

  • 1School of Photoelectric Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China. heyingji8@126.com.

Nanoscale
|May 12, 2020
PubMed
Summary

Researchers developed a novel polysiloxane embedded with Si-doped carbon dots (P-E-Si-CDs) for enhanced optical device applications. This stable, high-performance material offers promising potential for advanced LED lighting solutions.