III/V silicon hybrid laser based on a resonant Bragg structure

Area of Science:

• Photonics and Optical Engineering
• Semiconductor Devices
• Integrated Optics

Background:

• Tunable lasers are crucial components in optical communication and sensing systems.
• Integration of semiconductor optical amplifiers with silicon photonics offers potential for compact and high-performance devices.
• Achieving stable single-mode operation and high tuning speeds in such integrated lasers remains a challenge.

Purpose of the Study:

• To demonstrate an intensity-tunable laser with gigahertz tuning speed.
• To enable single-mode operation using a silicon photonic chip with a Bragg-based Fabry-Perot resonator.
• To investigate alternative coupling methods for improved integration.

Main Methods:

• Coupling a III/V reflective semiconductor optical amplifier (RSOA) to a silicon photonic chip.
• Incorporating a Bragg-based Fabry-Perot resonator within the silicon chip's stopband for filtering.
• Evaluating laser performance metrics including side mode suppression ratio, linewidth, and output power.
• Investigating the use of a micro-ball lens for RSOA-silicon chip coupling.

Main Results:

• Achieved a side mode suppression ratio of 43 dB.
• Measured a laser linewidth of 790 kHz.
• Obtained an optical output power of 1.65 mW at approximately 1530 nm.
• Demonstrated gigahertz tuning speed for intensity modulation.

Conclusions:

• The integrated RSOA and silicon photonic chip laser enables stable single-mode operation with high performance.
• The demonstrated gigahertz tuning speed is suitable for advanced optical applications.
• The study highlights the potential of silicon photonics for developing next-generation tunable lasers.