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InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods
Alexey E Zhukov1, Natalia V Kryzhanovskaya1, Eduard I Moiseev1
1International Laboratory of Quantum Optoelectronics, National Research University Higher School of Economics, 16 Soyuza Pechatnikov, St Petersburg 190008, Russia.
Materials (Basel, Switzerland)
|May 24, 2020
Summary
This study demonstrates novel quantum dot microdisk lasers grown on silicon substrates, achieving record-low threshold current density. These lasers operate efficiently without cooling, showing excellent stability and a projected lifetime of 83,000 hours.
Area of Science:
- Semiconductor Optoelectronics
- Materials Science
- Nanotechnology
Background:
- Development of efficient and stable semiconductor lasers is crucial for optical communication and computing.
- Integrating high-performance optoelectronic devices onto silicon platforms offers significant advantages for miniaturization and cost reduction.
- Quantum dot (QD) lasers show promise due to their unique electronic and optical properties.
Purpose of the Study:
- To fabricate and characterize injection microdisk lasers using epitaxially grown InAs/InGaAs quantum dots on silicon substrates.
- To evaluate the performance, thermal properties, and long-term stability of these novel silicon-based QD microdisk lasers.
- To investigate hybrid integration of QD microdisk lasers onto silicon using indium bonding.
Main Methods:
- Epitaxial growth of InAs/InGaAs quantum dot heterostructures on silicon substrates.
- Fabrication of microdisk lasers via photolithography and deep dry etching.
- Characterization of device performance, including threshold current density and thermal resistance.
- Long-term aging tests and hybrid integration experiments.
Main Results:
- Microdisk lasers operated reliably in continuous-wave mode at room and elevated temperatures without heatsinks.
- Record-low threshold current density of 0.36 kA/cm² achieved for 31 µm diameter devices.
- Thermal resistance comparable to devices on GaAs substrates; minimal output power degradation (~9%) over 1000 hours.
- Preliminary lifetime estimate of 83,000 hours for QD microlasers on silicon.
- Hybrid integration of GaAs-based QD microdisk lasers onto silicon demonstrated without affecting device characteristics.
Conclusions:
- Epitaxially grown InAs/InGaAs quantum dot microdisk lasers on silicon exhibit excellent performance and stability.
- These devices are suitable for heatsink-free, continuous-wave operation at room temperature, with a promising long operational lifetime.
- Hybrid integration offers a viable pathway for combining QD lasers with silicon photonics platforms.
