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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Yanwei Li1, Chun Zhao2, Deliang Zhu1

  • 1Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China.

Nanomaterials (Basel, Switzerland)
|May 24, 2020
PubMed

Keywords:
heterojunctionmetal oxide semiconductorsolution-processedthin-film transistors

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