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High-performance Nonvolatile Organic Photoelectronic Transistor Memory Based on Bulk Heterojunction Structure.

Shuqiong Lan1, Jianfeng Zhong1, Enlong Li1

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ACS Applied Materials & Interfaces
|June 20, 2020
PubMed
Summary

A new organic field-effect transistor (OFET) memory blends p-type and n-type semiconductors for high performance. This novel approach achieves a large memory window and over 10-year charge retention without extra trapping layers.

Keywords:
bulk heterojunctionmemory windowoptical memory arrayphotoelectronic memorytransistor

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Area of Science:

  • Materials Science
  • Electronics
  • Nanoscience

Background:

  • Organic field-effect transistor (OFET) memory is crucial for nonvolatile data storage.
  • Existing OFET memory types include floating gate, ferroelectric, and polymer-electret-based designs.
  • These traditional methods often require complex structures or additional trapping layers.

Purpose of the Study:

  • To propose a novel nonvolatile OFET memory device.
  • To investigate a simple blending method of p-type and n-type semiconductors.
  • To evaluate the performance and potential applications of the new OFET memory.

Main Methods:

  • Fabrication of OFET memory by blending p-type and n-type organic semiconductors.
  • Modulation of memory window by adjusting the dopant concentration of the n-type semiconductor.
  • Characterization of memory performance, including memory window, ON/OFF current ratio, and charge retention time.
  • Application of the blended devices in optical memory and imaging.

Main Results:

  • The blended OFET memory achieved a large memory window of up to 57.7 V.
  • An ON/OFF current ratio of approximately 10^5 and charge retention exceeding 10 years were observed.
  • The n-type semiconductor formed discontinuous charge-trapping centers within organic heterojunctions.
  • The devices demonstrated multilevel optical storage capabilities and were scaled to an 8x8 array for 2D image mapping.

Conclusions:

  • A simple and effective nonvolatile OFET memory was developed by blending semiconductors.
  • The proposed method offers comparable or superior performance to traditional OFET memories.
  • The technology shows significant potential for digital image memory and photoelectronic systems.