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Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory

Yue Peng1, Genquan Han2, Fenning Liu1

  • 1State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.

Nanoscale Research Letters
|June 24, 2020
PubMed

Keywords:
Al2O3AmorphousFerroelectricMemoryNon-volatile field-effect transistorOxygen vacancy dipole

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