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Updated: Dec 17, 2025
10:40
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
8.5K
Ferroelectric field-effect transistors for logic andin-situmemory applications
Lan Liu1,2, Xiang Hou1, Heng Zhang1
1ASIC & System State Key Lab., School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
Nanotechnology
|June 30, 2020
Summary
Researchers developed a new transistor combining ferroelectric polymers and molybdenum disulfide. This device offers in-memory computing, addressing energy and speed issues in current electronics for next-generation microelectronics.
Area of Science:
- Materials Science
- Electronics Engineering
- Nanotechnology
Background:
- Von Neumann architecture's processing-memory separation causes energy and speed inefficiencies.
- Integrated-circuit development faces significant obstacles due to these limitations.
Purpose of the Study:
- To explore the potential of two-dimensional materials field-effect transistors for next-generation microelectronics.
- To develop an in-memory computing solution addressing von Neumann architecture limitations.
Main Methods:
- Fabrication of a horizontal dual-gate ferroelectric field-effect transistor (HDG-FeFET).
- Integration of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) polymer with molybdenum disulfide (MoS2) nanoflakes.
Main Results:
- The HDG-FeFET device demonstrated in-situ memory of logic results during AND logic function processing.
- Achieved a logic output state-1/state-0 current ratio of 105 during operations.
- Maintained a non-volatile memory state-1/state-0 current ratio of 104 after 900 seconds.
Conclusions:
- The developed HDG-FeFET shows promise for in-memory computing applications.
- This technology could pave the way for more efficient next-generation computing architectures.
- Ferroelectric polymer and MoS2 integration offers a viable path for advanced microelectronics.
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