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Updated: Dec 16, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded
Won Douk Jang1, Young Jun Yoon2, Min Su Cho1
1School of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
Abstract:
In this work, a capacitorless one-transistor embedded dynamic random-access memory based on a metal-oxide-semiconductor field-effect transistor with a double-polysilicon layer structure has been proposed and investigated using technology computer-aided design simulation. By using the grain boundary for hole storage, a higher sensing margin of 4.35 /μA//μm is achieved compared to that without using the grain boundary. Furthermore, the proposed device achieves a superior retention time of 555.77 /μs, which is reasonable from the viewpoint of its application in embedded systems (>100 /μs), even at a high temperature of 358 K. For higher device reliability, the effect of the grain boundary on the capacitorless one-transistor embedded dynamic random-access memory is analyzed with different trap distributions. The proposed capacitorless one-transistor embedded dynamic random-access memory cell exhibited superior reliability in terms of retention time (>100 /μs).
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