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Updated: Dec 16, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Probing plasma-treated graphene using hyperspectral Raman
G Robert Bigras1, P Vinchon1, C Allard2
1Département de Physique, Université de Montréal, 1375 Avenue Thérèse-Lavoie-Roux, Montréal, Québec H2V 0B3, Canada.
Abstract:
Raman spectroscopy provides rich optical signals that can be used, after data analysis, to assess if a graphene layer is pristine, doped, damaged, functionalized, or stressed. The area being probed by a conventional Raman spectrometer is, however, limited to the size of the laser beam (∼1 µm); hence, detailed mapping of inhomogeneities in a graphene sample requires slow and sequential acquisition of a Raman spectrum at each pixel. Studies of physical and chemical processes on polycrystalline and heterogeneous graphene films require more advanced hyperspectral Raman capable of fast imaging at a high spatial resolution over hundreds of microns. Here, we compare the capacity of two different Raman imaging schemes (scanning and global) to probe graphene films modified by a low-pressure plasma treatment and present an analysis method providing assessments of the surface properties at local defects, grain boundaries, and other heterogeneities. By comparing statistically initial and plasma-treated regions of graphene, we highlight the presence of inhomogeneities after plasma treatment linked to the initial state of the graphene surface. These results provided statistical results on the correlation between the graphene initial state and the corresponding graphene-plasma interaction. This work further demonstrates the potential use of global hyperspectral Raman imaging with advanced Raman spectra analysis to study graphene physics and chemistry on a scale of hundreds of microns.
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