Semiconductors
Metal-Semiconductor Junctions
Band Theory
Biasing of Metal-Semiconductor Junctions
Electrostatic Boundary Conditions in Dielectrics
Schottky Barrier Diode
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Updated: Dec 15, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Yury Yu Illarionov1,2, Theresia Knobloch3, Markus Jech3
1Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040, Vienna, Austria. illarionov@iue.tuwien.ac.at.
Scalable insulators are crucial for advancing 2D nanoelectronic devices. Current options like amorphous oxides and hexagonal boron nitride are inadequate, necessitating novel solutions for improved performance.
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