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Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors

Min-Gyu Shin1, Kang-Hwan Bae1, Hyun-Seok Cha1

  • 1School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea.

Materials (Basel, Switzerland)
|July 12, 2020
PubMed

Keywords:
bulk channelfloating Ni capping layerhigh mobilityp-channel SnOpercolation conductionthin-film transistor

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