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Related Experiment Video

Updated: Dec 15, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Spatial defects nanoengineering for bipolar conductivity in MoS₂.

Xiaorui Zheng¹, Annalisa Calò^1,2, Tengfei Cao^3,4

¹Tandon School of Engineering, New York University, 6 MetroTech Center, New York, NY, 11201, USA.

Nature Communications

|July 12, 2020

Summary

Researchers precisely controlled defects in molybdenum disulfide (MoS₂) using thermochemical scanning probe lithography (tc-SPL). This technique enables on-demand p- or n-type doping for advanced electronic devices.

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Last Updated: Dec 15, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

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Published on: December 5, 2015

Fabrication of Spatially Confined Complex Oxides

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Area of Science:

Materials Science
Nanotechnology
Condensed Matter Physics

Background:

Two-dimensional transition metal dichalcogenides are crucial for next-generation electronics.
Controlling defects in these materials is key to tailoring their electronic properties.

Purpose of the Study:

To demonstrate nanoscale control over defects in monolayer molybdenum disulfide (MoS₂).
To achieve on-demand p-type and n-type doping for fabricating electronic devices.

Main Methods:

Integration of thermochemical scanning probe lithography (tc-SPL) with a flow-through reactive gas cell.
Utilizing X-ray photoelectron spectroscopy, scanning transmission electron microscopy, and density functional theory for characterization.

Main Results:

Achieved precise sub-micrometer spatial control of defects in MoS₂.
Demonstrated on-demand p-type doping (via HCl/H₂O) and n-type doping (via N₂).
Fabricated field-effect transistors and p-n junctions with a rectification ratio exceeding 10⁴.

Conclusions:

Thermochemical scanning probe lithography offers precise defect engineering in 2D materials.
Defect-induced doping in MoS₂ can be controlled by reactive gas environments.
Protruding covalent S-S bonds are linked to p-type doping, while N₂ treatment leads to n-character.