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Photoconductivity Multiplication in Semiconducting Few-Layer MoTe₂.

Wenhao Zheng¹, Mischa Bonn¹, Hai I Wang¹

¹Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany.

|July 23, 2020

Summary

Few-layer molybdenum ditelluride (MoTe2) exhibits efficient photoconductivity multiplication due to steplike carrier multiplication. This finding positions MoTe2 as a promising material for advanced optoelectronic devices.

Keywords:

2D materials MoTe2 carrier multiplication impact ionization terahertz spectroscopy transition metal dichalcogenides (TMDCs)

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Area of Science:

Materials Science
Condensed Matter Physics
Optoelectronics

Background:

Few-layer 2H-MoTe2 is a material with potential optoelectronic applications.
Carrier multiplication is a key phenomenon for enhancing optoelectronic device efficiency.

Purpose of the Study:

To investigate and quantify photoconductivity multiplication in few-layer 2H-MoTe2.
To explore the origins of efficient carrier multiplication in MoTe2.
To assess MoTe2's suitability for optoelectronic devices.

Main Methods:

Ultrafast, excitation-wavelength-dependent photoconductivity measurements.
Contact-free terahertz spectroscopy.
Analysis of carrier multiplication quantum yield and mobility.

Main Results:

Efficient steplike carrier multiplication observed in few-layer 2H-MoTe2.
Near-unity quantum yield and high carrier mobility (∼45 cm^2 V^-1 s^-1) demonstrated.
Photoconductivity multiplication quantified using terahertz spectroscopy.

Conclusions:

The observed photoconductivity multiplication in MoTe2 is a direct result of efficient carrier multiplication.
MoTe2's properties make it a strong candidate for high-performance optoelectronic devices.
Further theoretical studies are suggested to understand the underlying mechanisms.