Integrated graphene oxide resistive element in tunable RF filters

Area of Science:

• Electrical Engineering
• Materials Science
• Telecommunications

Background:

• Adaptable communication systems require dynamic spectrum management.
• Memristors, a type of resistive RAM (RRAM), show promise for reconfigurable RF devices.

Purpose of the Study:

• To explore the use of resistive switches for frequency tuning in high-frequency RF filters.
• To demonstrate a novel tunable RF filter using graphene oxide (GO) memristors.

Main Methods:

• Simulations were performed using Ansys HFSS.
• A prototype tunable RF filter was fabricated integrating GO with a microstrip open stub notch filter.
• The frequency tuning was achieved by exploiting the switching resistance of the GO memristor.

Main Results:

• The device successfully tuned the resonant frequency of the RF filter by altering the GO resistance states (HIGH/OFF and LOW/ON).
• Measured results confirmed the potential of RRAM in tunable RF applications.
• The technique allows RF device tuning without surface mount device (SMD) elements or complex methods.

Conclusions:

• Resistive switches, specifically GO-based memristors, are effective for tunable RF filters.
• This approach offers a simpler and more efficient method for developing reconfigurable RF devices.